<citation>
<author-group>
<name>
<surname>Mounika</surname>
<given-names>B</given-names>
</name>
<name>
<surname>Ajayan</surname>
<given-names>J</given-names>
</name>
<name>
<surname>Bhattacharya</surname>
<given-names>S</given-names>
</name>
</author-group>
<year>2023</year>
<article-title>Impact of Gate Structure and Fe-doped AlGaN Buffer on RF/DC Characteristics of Nanoscale AlN/GaN/SiC HEMT for Microwave Applications</article-title>
<source>NanoWorld J</source>
<volume>9</volume>
<issue>S5</issue>
<fpage>S175</fpage>
<lpage>S179</lpage>
</citation>