<citation>
<author-group>
<name>
<surname>Pande</surname>
<given-names>N</given-names>
</name>
<name>
<surname>Upadhyay</surname>
<given-names>KT</given-names>
</name>
<name>
<surname>Chattopadhyay</surname>
<given-names>MK</given-names>
</name>
</author-group>
<year>2024</year>
<article-title>Schottky Barrier Dependent 2DEG Model for GaN/AlInGaN/AlN/GaN Heterostructure</article-title>
<source>NanoWorld J</source>
<volume>10</volume>
<issue>S1</issue>
<fpage>S212</fpage>
<lpage>S217</lpage>
</citation>