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  Scopus ID: 21100926589

Schottky Barrier Dependent 2DEG Model for GaN/AlInGaN/AlN/GaN Heterostructure

Neha Pande, Kavita T. Upadhyay and Manju K. Chattopadhyay

Abstract

In this paper we present analytical model for two-dimensional electron gas (2DEG) and surface barrier height (SBH) in GaN/AlInGaN/AlN/GaN heterostructure. An analytical expression for 2DEG charge density ns has been derived which is dependent on thickness of AlInGaN and GaN cap layers of heterostructure and mole fraction of Al and In. We have also shown the effect of mole fraction variation on ns and SBH. The model has excellent agreement with experiment data available in literature for given mole fraction and thickness of layers. This makes the model to be a useful tool in advance design and characterization of GaN/AlInGaN/AlN/GaN heterostructure.

Published on: March 19, 2024
doi: 10.17756/nwj.2024-s1-038
Citation: Pande N, Upadhyay KT, Chattopadhyay MK. 2024. Schottky Barrier Dependent 2DEG Model for GaN/AlInGaN/AlN/GaN Heterostructure. NanoWorld J 10(S1): S212-S217.

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