Advancement in nanodevice is possible through improving either the nanodevice structure with nano engineering techniques or by introducing material based modification. In this paper, dual material gate silicon-on-insulator (DMG – SOI) metal-oxide-semiconductor field effect transistor (MOSFET) using zirconium dioxide (ZrO₂), a high-k gate dielectric material, is studied for the first time. The device simulated has been carried out on the device performance of nanoscaled DMG – SOI MOSFETs using ZrO₂, a high-k gate dielectric material. To explore the behaviors of the threshold voltage variation and the drain current, a device simulation has been conducted using both low-k and high-k dielectric material. Based on these behaviors, additional research into the transconductance, drain-conductance, and I_on/I_off ratio for ZrO₂ has been done, and the results have been compared to that of silicon dioxide (SiO₂). High-k dielectric material enables outstanding device performance with the proposed structure when compared to structures using two distinct gate dielectric materials, according to the study. This research paper will be concluded by summarizing the key findings and their implications for the characteristics analysis of nanoscaled DMG – SOI MOSFET in the context of nanotechnology and nanoscience.

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