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Characteristics Analysis of DMG – SOI MOSFET Using Both High-k and Low-k Dielectrics Materials

Soma Rani Patra, Arpita Ghosh and Tiya Dey Malakar


Advancement in nanodevice is possible through improving either the nanodevice structure with nano engineering techniques or by introducing material based modification. In this paper, dual material gate silicon-on-insulator (DMG – SOI) metal-oxide-semiconductor field effect transistor (MOSFET) using zirconium dioxide (ZrO2), a high-k gate dielectric material, is studied for the first time. The device simulated has been carried out on the device performance of nanoscaled DMG – SOI MOSFETs using ZrO2, a high-k gate dielectric material. To explore the behaviors of the threshold voltage variation and the drain current, a device simulation has been conducted using both low-k and high-k dielectric material. Based on these behaviors, additional research into the transconductance, drain-conductance, and Ion/Ioff ratio for ZrO2 has been done, and the results have been compared to that of silicon dioxide (SiO2). High-k dielectric material enables outstanding device performance with the proposed structure when compared to structures using two distinct gate dielectric materials, according to the study. This research paper will be concluded by summarizing the key findings and their implications for the characteristics analysis of nanoscaled DMG – SOI MOSFET in the context of nanotechnology and nanoscience.

Published on: March 18, 2024
doi: 10.17756/nwj.2024-s1-031
Citation: Patra SR, Ghosh A, Malakar TD. 2024. Characteristics Analysis of DMG – SOI MOSFET Using Both High-k and Low-k Dielectrics Materials. NanoWorld J 10(S1): S177-S181.

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