This paper proposes a CIS (copper indium selenide) based solar cell with an un-doped zinc oxide (ZnO), and titanium dioxide (TiO₂) as three layers and its performance was examined using a simulation program named SCAPS-1D software (Solar Cells Capacitance Simulator). Because of their affordable manufacturing prices and high conversion efficiencies, solar cells are extensively studied and used for power generation CIS based solar cells (CuInSe₂) are used since they are less expensive than silicon cells and uses thin sheet technology. In the visible range, ZnO is a highly conductive thin film with exceptional transparency. TiO₂ is a low cost and nontoxic photo catalyst. The ZnO layer thickness and temperature of solar cells were evaluated in depth based on the device structure and fabrication method. An efficient structure of CIS/ZnO/TiO₂ thin-film solar cell is obtained when the temperature is changed from 400 K to 150 K by adding an intrinsic layer of 2 micrometer in the structure. The ZnO layer thickness is changed from 0.001 micrometer to 1.5 micrometer and results are observed. Besides that, the C-V characteristics of the structure are observed.

PDF (Download Full text)

Download Citation (XML)