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  Scopus ID: 21100926589

Simulation Analysis of AlGaN/BGaN Based Deep Ultraviolet-A Light Emitting Diodes with Graded Step Electron Barrier Layer

Aruna Dore, M. Manikandan, G. Dhivyasri, M.G. Sumithra and R. Manaswini

Abstract

This study designs and analyses step-graded alternating barriers of Aluminum Gallium Nitride/Boron Gallium Nitride (AlGaN/BGaN) in the multiple quantum well (MQW) light-emitting diodes (LEDs). The graded stepwise electron blocking layer (EBL) was introduced in DUV (Deep-ultraviolet)-LED with a luminosity wavelength of 360 nm (EBL). The silicon carbide substrate used in the device is also significant for the device’s better optical performance owing to its reduced polarization effect, improved crystal structure, and high thermal conductivity.

Published on: December 22, 2023
doi: 10.17756/nwj.2023-s5-022
Citation: Dore A, Manikandan M, Dhivyasri G, Sumithra MG, Manaswini R. 2023. Simulation Analysis of AlGaN/BGaN Based Deep Ultraviolet-A Light Emitting Diodes with Graded Step Electron Barrier Layer. NanoWorld J 9(S5): S109-S112.

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