Indexed In Scopus
  Scopus ID: 21100926589

Impact of Gate Structure and Fe-doped AlGaN Buffer on RF/DC Characteristics of Nanoscale AlN/GaN/SiC HEMT for Microwave Applications

B. Mounika, J. Ajayan and Sandip Bhattacharya

Abstract

The influence of gate structure on AlN/GaN/SiC HEMT (High electron mobility transistor) is analyzed in this paper. The design and comparison of a T-gate HEMT with a gate footprint of 100 nm and a rectangular gate HEMT with a gate length (LG) of 200 nm is performed. The T-gate device was found to have better RF/DC performance with the highest GM of 197.4 mS/mm, the greatest ID of 0.674 A/mm, and the maximum fT of 84.42 GHz. Moreover, by doping the Al0.08Ga0.92N buffer layer with Fe-impurities, the performance of the HEMTs is examined. In both HEMTs, the performance of the Fe-doped and undoped buffers is compared. From the comparison, the Fe-AlGaN buffer performed better in both cases. Besides, from the breakdown simulation results, it is observed that rectangular gate HEMT achieved the highest off- state breakdown voltage (VBR) of 75.93 V. The VBR recorded by the T-gate device was 63.82 V. These findings demonstrate that T-shaped HEMTs have significantly better RF/DC behavior than conventional HEMTs, making them the preferred choice for high-frequency applications including satellite, RADAR, and wireless communications, etc.

Published on: December 22, 2023
doi: 10.17756/nwj.2023-s5-034
Citation: Mounika B, Ajayan J, Bhattacharya S. 2023. Impact of Gate Structure and Fe-doped AlGaN Buffer on RF/DC Characteristics of Nanoscale AlN/GaN/SiC HEMT for Microwave Applications. NanoWorld J 9(S5): S175-S179.

Download Citation (XML)

15 Downloads
Bitnami