Indexed In Scopus
  Scopus ID: 21100926589

Driving Capability Analysis and Power Supply Scaling Effects of Deep Nanoscale 1-bit Full Adder at Wide Operating Temperatures

Allamshetti Nikhitha, J. Ajayan, Bobbala Vaishanavi, Kummarikuntla Shivasai, Chandragiri Suchith Bhanu and B. Mounika

Abstract

1-Bit Full Adders (1-BFA) are the basic building blocks of advanced VLSI systems such as, micro and digital and signal processors. Therefore, here we report the driving capability and thermal reliability of 1-BFA designed using 16 nm CMOS process with a VDD ranges from 0.7 V to 1.2 V. This 1-BFA is highly promising for the development of multi-stage structures because of their outstanding driving capability. The 16 nm CMOS process based 1-BFA exhibited a power and delay of 1.903 µW and 33.18 pS with a VDD of 0.7 V @ 27 °C, whereas, it showcased a power and delay of 1.204 µW and 42.57 pS with a same VDD @ 107 °C. When VDD is escalated to 1.2 V, the 1-BFA showcased a power and delay of 46.53 µW and 3.193 pS @ 27 °C and 24.48 µW and 10.29 pS @ 107 °C, respectively.

Published on: December 22, 2023
doi: 10.17756/nwj.2023-s5-027
Citation: Nikhitha A, Ajayan J, Vaishanavi B, Shivasai K, Bhanu CS, et al. 2023. Driving Capability Analysis and Power Supply Scaling Effects of Deep Nanoscale 1-bit Full Adder at Wide Operating Temperatures. NanoWorld J 9(S5): S137-S142.

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