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  Scopus ID: 21100926589

Review on AlGaN/GaN High Electron Mobility Transistors for Biomedical Applications

G. Dhivyasri, M. Manikandan, G. Gokila Deepa, R. Remya, Sudha Ramasamy and M.G. Sumithra

Abstract

Primarily, AlGaN/GaN high electron mobility transistors (HEMT) have an effective properties such as being nontoxic to living cells, good thermal stability, radiation hardness, and strain effect fascinating and efficient platform in medical diagnosis and health care applications. The dielectrically modulated AlGaN-based HEMTs increase the device sensitivity. In addition, HEMTs with disposable gates and ethanolamine-modified strategy improve the proficiency of Prostate Specific Antigen (PSA) HEMT devices with multiple channels resulting in enhanced device sensitivity. A detailed review of the adopted techniques in AlGaN/GaN HEMTs is presented in the article to provide insight into the performance of the device that is suitable for biomedical applications.

Published on: December 21, 2023
doi: 10.17756/nwj.2023-s5-014
Citation: Dhivyasri G, Manikandan M, Deepa GG, Remya R, Ramasamy S, et al. 2023. Review on AlGaN/GaN High Electron Mobility Transistors for Biomedical Applications. NanoWorld J 9(S5): S70-S75.

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