R. Manaswini, M. Manikandan, C.P. Latha, Joseph Anthony Pratap, G. Dhivyasri, Aruna Dore and M.G. Sumithra
Abstract
This study illustrates the efficient and effective design of BGaN-based ultraviolet light-emitting diodes which includes a staircase barrier and V-shaped well-embedded in order to achieve higher working potential. The results prove the improved wall-plug efficiency (WPE) and external quantum efficiency (EQE) values. The V-shaped structure increases the confinement of electrons in the quantum barriers and also improves the injection of holes in the device’s active region. The structure also facilitates the uniform distribution and migration of the holes in the active region. In addition to this, it also enhances the radiative recombination rates significantly resulting in the quantum efficiency of the device.
Published on: December 21, 2023
doi: 10.17756/nwj.2023-s5-013
Citation: Manaswini R, Manikandan M, Latha CP, Pratap JA, Dhivyasri G, et al. 2023. Optical Performance of AlGaN/BGaN Deep-ultraviolet LEDs with Staircase Barrier and V-shape Well Structure. NanoWorld J 9(S5): S67-S69.
doi: 10.17756/nwj.2023-s5-013
Citation: Manaswini R, Manikandan M, Latha CP, Pratap JA, Dhivyasri G, et al. 2023. Optical Performance of AlGaN/BGaN Deep-ultraviolet LEDs with Staircase Barrier and V-shape Well Structure. NanoWorld J 9(S5): S67-S69.
Download Citation (XML)62 Downloads
