We report on the investigation of a few important performance parameters of solar cells based on multi-layered Indium Gallium Nitride (InGaN) quantum dot (QD) layers embedded in the intrinsic region of a p-i-n structure. We have taken into account the variation of indium composition inside the QD and dot size due to interdiffusion, which may occur due to annealing or device processing steps. The nature of the inhomogeneous distribution of dot size in the QD ensemble is considered to be Gaussian. There are contradictions regarding the fundamental band parameters of InGaN. Because the bowing parameter and the band offset ratio are not yet established. As such, the effects of band offset ratio and bowing parameters on the performance of solar cells, such as spectral response (SR), photocurrent density, open circuit voltage, and the short circuit current density of multi-layered QD solar cells (QDSCs), have been presented in this work. Despite the fact that InGaN alloys, by virtue of their wide band tunability, are promising candidates for emerging photovoltaics, the performance of fabricated devices utilizing this alloy is bound to deviate from the predictions made in theory due to the varying nature of the fundamental band parameters. A prior knowledge of such deviation is essential for designers working in this field. We have also focused on the extent of variation in the performance parameters of quantum dot solar cells due to changes in band offset ratios and bowing parameters of InGaN both for near-ideal as-grown and interdiffusion-induced realistic dots.

PDF (Download Full text)

Download Citation (XML)