Abstract
In this paper, zinc oxide (ZnO)-based bottom gate top contact thin film transistors (TFT) of different aspect ratio (W/L) has been investigated where the TFT’s channel length (L) can be changed while maintaining a constant width (W). For the performance analysis utilizing SILVACO TCAD, we centered on the ZnO’s capacity to fuse gas and the staggered inverted TFT’s capability to modulate current. Analysis has been done on the effects of channel length variation, noble metals, and work function on this device structure’s transfer and output characteristics. Later, the hydrogen sensing analysis was included. Here, the standard MOS gate stack is preserved in this TFT arrangement, and the source drain terminals and channel region are covered by an ohmic gate electrode.
doi: 10.17756/nwj.2023-s5-002
Citation: Kumar P, Ahmed T, Askari SSA, Das MK. 2023. Design and Analysis of ZnO Based TFT for Detection of Hydrogen Gas. NanoWorld J 9(S5): S07-S13.
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