Ketao Chen, Zhen Qiao, Tyler Milo, Jawhara Karam, Justin Yuen and Hai-Feng Ji
Abstract
We report a novel proof-of-concept FET design (CoreFET) based on a thin wire, which can be fabricated without any micromanufacturing processes. Zinc oxide (ZnO) and Poly(3-hexylthiophene) (P3HT) were used to develop thin film
CoreFETs, with the central core of wire acting as a gate terminal. The design may be used for multiple electronic and optoelectronic devices, and the unique wire shape renders it favorable for specific applications, such as chemical and biological sensing.
Published on: May 30, 2019
doi: 10.17756/nwj.2019-067
Citation: Chen K, Qiao Z, Milo T, Karam J, Yuen J, Ji H-F. 2019. Wire-Based Core Field Effect Transistor (CoreFET). NanoWorld J 5(2): 13-15.
doi: 10.17756/nwj.2019-067
Citation: Chen K, Qiao Z, Milo T, Karam J, Yuen J, Ji H-F. 2019. Wire-Based Core Field Effect Transistor (CoreFET). NanoWorld J 5(2): 13-15.
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