<citation>
<author-group>
<name>
<surname>Mounika</surname>
<given-names>B</given-names>
</name>
<name>
<surname>Ajayan</surname>
<given-names>J</given-names>
</name>
<name>
<surname>Bhattacharya</surname>
<given-names>S</given-names>
</name>
</author-group>
<year>2023</year>
<article-title>Performance Evaluation of Nanoscale Gate Engineered AlN/GaN Recessed T-gated HEMT with Fe-doped Buffer for Future Power Electronic Applications</article-title>
<source>NanoWorld J</source>
<volume>9</volume>
<issue>S5</issue>
<fpage>S132</fpage>
<lpage>S136</lpage>
</citation>